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| inchange semiconductor product specification silicon npn power transistors BU208 description ? ? with to-3 package ? high voltage ,high speed applications ? for use in horizontal deflection output stages for color tv receives. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i cm collector current-peak 7.5 a i b base current 0.1 a i bm base current-peak 2.5 a p t total power dissipation t c =25 ?? 150 w t j junction temperature 115 ?? t stg storage temperature -65~115 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1. 6 k/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU208 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0;l=25mh 700 v v (br)ebo emitter-base breakdown votage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =4.5 a;i b =2 a 5.0 v v besat base-emitter saturation voltage i c =4.5 a;i b =2 a 1.5 v i ces collector cut-off current v ce =1500v;v be =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =4.5a ; v ce =5v 2.25 c ob output capacitance i e =0; v cb =10v;f=1mhz 150 pf f t transition frequency i c =0.1a ; v ce =15v 1 mhz t s storage time 10 | s t f fall time i c =4.5a ;i b =1.8a l b =10 | h 0.7 | s inchange semiconductor product specification 3 silicon npn power transistors BU208 package outline fig.2 outline dimensions |
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